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2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI)
2SK3911
Switching Regulator Applications
* * * * * Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 20 80 150 792 20 15 150 -55~150 Unit V V V A W mJ A mJ C C
1. Gate 2. Drain (heatsink) 3. Source
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-65 2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3911
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 20 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 10 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V ID = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min 30 600 2.0 3.0 Typ. 0.22 11 4250 10 420 12 45 12 80 60 50 10 Max 10 500 4.0 0.32 pF Unit A V A V V S

ns
RL = 20 VDD 200 V -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1350 24 Max 20 80 -1.7 Unit A A V ns C
Marking
TOSHIBA
K3911
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3911
ID - VDS
20 10 8 6.5 COMMON SOURCE Tc = 25C Pulse test 6 12 50 COMMON SOURCE Tc = 25C PULSE TEST
ID - VDS
10 8
DRAIN CURRENT ID (A)
7
DRAIN CURRENT ID (A)
16
40
30
7
8
5.5
20
6.5
6 10 5.5 VGS = 5 V
4
VGS = 5 V
0
0
2
4
6
8
10
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
50
VDS - VGS
20
DRAIN CURRENT ID (A)
40
25
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE VDS = 20 V PULSE TEST
16
COMMON SOURCE Tc = 25C PULSE TEST
30 100 20 Tc = -55C
12
8 ID = 20 A 4 5 10
10
0
0
2
4
6
8
10
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yfs - ID
100
RDS (ON) - ID
1000
FORWARD TRANSFER ADMITTANCE Yfs (S)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (m)
COMMON SOURCE VDS = 20 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST VGS = 10 V
10
Tc = -55C 25
100
100
1
0.1 0.1
10 1 10 100 1 10 100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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2SK3911
RDS (ON) - Tc
1000
IDR - VDS
100
800
DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (m)
COMMON SOURCE VGS = 10 V PULSE TEST
COMMON SOURCE Tc = 25C PULSE TEST
10
600
400
ID = 20 A 5
10 1 5 3 1 VGS = 0 V 0.1 0 -0.4 -0.8 -1.2 -1.6
200 10 0 -80
-40
0
40
80
120
160
CASE TEMPERATURE
Tc (C)
DRAIN-SOURCE VOLTAGE VDS (V)
C - VDS
10000 Ciss 5
Vth - Tc
Vth (V)
COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST
(pF)
4
CAPACITANCE C
Coss
GATE THRESHOLD VOLTAGE
1000
3
100
2
10
1 0.1
COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C PULSE TEST 1 10
Crss
1
100
0 -80
-40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc (C)
PD - Tc
200 500
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE ID = 20 A Tc = 25C PULSE TEST 20
PD (W)
DRAIN POWER DISSIPATION
120
300 100 200 VGS 100
200 VDD = 400 V
12
80
8
40
4
0 0
40
80
120
160
200
0 0
20
40
60
80
0 100
CASE TEMPERATURE
Tc (C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
160
400
VDS
16
(V)
2SK3911
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 100 1 10 100 1 10
0.01
0.001 10
PULSE WIDTH tw
(s)
SAFE OPERATING AREA
1000 1000
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
800
100 ID max (PULSE) * 100 s * ID max (CONTINUOUS) 1 ms * 10
600
DRAIN CURRENT ID (A)
400
200
DC OPERATION Tc=25 1
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (C)
0.1 *: SINGLE NONPETITIVE PULSE Tc = 25C Curves must be derated linearly with increase in temperature 0.01 1 10 VDSS max 100 1000
15 V -15 V
BVDSS IAR VDD VDS
DRAIN-SOURCE VOLTAGE VDS (V)
TEST CIRCUIT RG = 25 VDD = 90 V, L = 3.46 mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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